Semiconductor based electronic devices are being
scaled into nano-meters of dimension. Present electronics demands the better
material which will be reliable than the previous used semiconductor materials
such as silicon. Silicon has now the less capability and also not optimum in
all respect. Gallium Arsenide is now emerging good choice the other semiconductor like silicon and germanium. This
work presents the basic physics of the single electron transistor (SET) using
GaAs semiconductor material. The coulomb effect calculations in the SET,
mobility of GaAs in the SET and permittivity vs. frequencies in order of THz
depicts that GaAs SET may be used in the high frequency communication devices.